| PART |
Description |
Maker |
| APT10040B2VR APT10040LVR |
POWER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT10040B2VFR APT10040LVFR |
POWER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
RELAY SSR SPST 280VAC 10A DIN MT
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT10035JFLL |
POWER MOS 7 1000V 25A 0.350 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10086SVR |
POWER MOS V 1000V 13A 0.860 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1001RSVR APT1001RSVRG |
100% Avalanche Tested
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| STU6NA100 6003 |
N - CHANNEL 1000V - 1.45ohm - 6A - Max220 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 1000V - 1.45 - 6A - Max220 FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| APT10026JLL |
POWER MOS 7 1000V 30A 0.260 Ohm
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| APT10030L2VFR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
